Abstract: The operation and reliability of gate driver circuits based on 4H-SiC MOSFETs at temperatures up to 300°C were reported. Due to the advantages of 4H-SiC MOSFETs, the driver circuit can ...
Navitas is now sampling 2.3-kV and 3.3-kV SiC MOSFETs in power-module, discrete, and known good die (KGD) formats.
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